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FJA13009TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FJA13009TU
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 2167
- Description: FJA13009TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | 700V |
| Emitter Base Voltage (VEBO) | 9V |
| hFE Min | 6 |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 400V |
| Max Power Dissipation | 130W |
| Current Rating | 12A |
| Frequency | 4MHz |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 130W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 12A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A 5V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Collector Emitter Breakdown Voltage | 400V |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1V |
FJA13009TU Overview
In this device, the DC current gain is 8 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 12A current rating.In the part, the transition frequency is 4MHz.Maximum collector currents can be below 12A volts.
FJA13009TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJA13009TU Applications
There are a lot of ON Semiconductor FJA13009TU applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
