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FGH60N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FGH60N60SMD
- Package: TO-247-3
- Datasheet:
- Stock: 7553
- Description: FGH60N60SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 600W |
| Base Part Number | FGH60N60 |
| Number of Elements | 1 |
| Rise Time-Max | 70ns |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 27 ns |
| Power - Max | 600W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 146 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 120A |
| Reverse Recovery Time | 39 ns |
| JEDEC-95 Code | TO-247AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Turn On Time | 59 ns |
| Test Condition | 400V, 60A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
| Turn Off Time-Nom (toff) | 163 ns |
| IGBT Type | Field Stop |
| Gate Charge | 189nC |
| Current - Collector Pulsed (Icm) | 180A |
| Td (on/off) @ 25°C | 18ns/104ns |
| Switching Energy | 1.26mJ (on), 450μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 68ns |
| Height | 20.6mm |
| Length | 15.6mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FGH60N60SMD Features
Maximum junction temperature : TJ =175 °C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A
High input impedance
Fast switching: EOFF =7.5uJ/A
Tightened parameter distribution
RoHS compliant
FGH60N60SMD Applications
Uninterruptible Power Supply
Energy Generation & Distribution
Other Industrial
FGH60N60SMD Description
FGH60N60SMD On Semiconductor's new series of second-generation field-stop IGBT uses the new field-stop IGBT technology, which provides the best performance for solar inverter, UPS, welder, telecom, ESS and PFC applications, which are essential for low conduction and switching loss.
