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FGH50T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FGH50T65UPD
- Package: TO-247-3
- Datasheet:
- Stock: 1515
- Description: FGH50T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JEDEC-95 Code | TO-247AB |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 2.1V |
| Turn On Time | 101 ns |
| Test Condition | 400V, 50A, 6 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 185 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 230nC |
| Current - Collector Pulsed (Icm) | 150A |
| Td (on/off) @ 25°C | 32ns/160ns |
| Switching Energy | 2.7mJ (on), 740μJ (off) |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Fall Time-Max (tf) | 29ns |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 50 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 5 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 340W |
| Number of Elements | 1 |
| Rise Time-Max | 77ns |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 340W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 650V |
| Max Collector Current | 100A |
| Reverse Recovery Time | 53 ns |
FGH50T65UPD Description
On Semiconductor's new series of field stop slot IGBT FGH50T65UPD uses innovative field stop slot IGBT technology to provide optimal performance for solar inverters, uninterruptible power supplies, welders and digital generators that require low conduction and switching loss.
FGH50T65UPD Features
Maximum Junction Temperature : TJ = 175°C
Positive Temperaure Co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 50A
High input impedance
Tightened Parameter Distribution
RoHS compliant
Short-circuit ruggedness: > 5μs @ 25°C
FGH50T65UPD Applications
Uninterruptible Power Supply
Other Industrial
