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ContactFGH40T65UPD
FGH40T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FGH40T65UPD
- Package: TO-247-3
- Datasheet:
- Stock: 3177
- Description: FGH40T65UPD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 268W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 650V |
| Max Collector Current | 80A |
| Reverse Recovery Time | 43 ns |
| JEDEC-95 Code | TO-247AB |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 2.1V |
| Turn On Time | 57 ns |
| Test Condition | 400V, 40A, 7 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 213 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 177nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 20ns/144ns |
| Switching Energy | 1.59mJ (on), 580μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Fall Time-Max (tf) | 22ns |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 50 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 268W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
Description
The FGH40T65UPD is a 650 V, 40 A Field Stop Trench IGBT. ON Semiconductor's new series of field stop trench IGBTs uses novel field stop trench IGBT technology to provide optimum performance for solar inverters, UPS, welders, and digital power generators where low conduction and switching losses are critical.
Features
Tightened Parameter Distribution
Short Circuit Ruggedness > 5 μs @ 25°C
This Device is Pb?Free and is RoHS Compliant
Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 40 A
100% of Parts Tested ILM
High Input Impedance
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co?efficient for Easy Parallel Operating
High Current Capability
Applications
Solar Inverter, UPS, Welder, Digital Power Generator
Telecom, ESS
AC and DC Motor Drives Offering Speed Control
Chopper and Inverters
Solar Inverters
SMPS (Switched Mode Power Supply)
