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FGH40T65SHD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FGH40T65SHD-F155
- Package: TO-247-3
- Datasheet:
- Stock: 6482
- Description: FGH40T65SHD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 268W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 268W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 80A |
| Reverse Recovery Time | 31.8 ns |
| JEDEC-95 Code | TO-247AB |
| Collector Emitter Breakdown Voltage | 650V |
| Test Condition | 400V, 40A, 6 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 40A |
| IGBT Type | Trench Field Stop |
| Gate Charge | 72.2nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 19.2ns/65.6ns |
| Switching Energy | 1.01mJ (on), 297μJ (off) |
| RoHS Status | ROHS3 Compliant |
FGH40T65SHD-F155 Description
FGH40T65SHD-F155 is a 650v IGBT. Using novel field stop IGBT technology, ON Semiconductor's new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where low conduction and switching losses are essential. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor FGH40T65SHD-F155 is in the TO?247?3LD package with 268W power dissipation.
FGH40T65SHD-F155 Features
Maximum Junction Temperature: Tj =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat)= 1.6 V(Typ.)@Ic=40A
100% of the Parts Tested for ILM (Note 1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
This Device is Pb-Free and is RoHS Compliant
FGH40T65SHD-F155 Applications
Solar Inverter
UPS
Welder
Telecom
ESS
PFC
