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FGB40N60SM
  • FGB40N60SM

FGB40N60SM

FGB40N60SM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FGB40N60SM
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 5994
  • Description: FGB40N60SM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 349W
Terminal Form GULL WING
Base Part Number FGB40N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 28ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 349W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Max Breakdown Voltage 600V
Turn On Time 37 ns
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Turn Off Time-Nom (toff) 132 ns
IGBT Type Field Stop
Gate Charge 119nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 12ns/92ns
Switching Energy 870μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 17ns

FGB40N60SM Description


ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for welder and PFC applications that require low conduction and switching losses. FGB40N60SM has a maximum power dissipation of 349W and an operating temperature of -55°C175°C TJ. The FGB40N60SM has three pins and is packaged in a Tape & Reel (TR) format.



FGB40N60SM Features


  • Maximum junction temperature: TJ =175 °C

  • Positive temperaure co-efficient for an easy parallel operating

  • High current capability

  • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC =40A

  • Fast switching: EOFF =6.5uJ/A

  • Tightened parameter distribution

  • RoHS compliant

  • IR reflow only



FGB40N60SM Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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