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FGA40N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FGA40N65SMD
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 7925
- Description: FGA40N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Elements | 1 |
| Rise Time-Max | 28ns |
| Element Configuration | Single |
| Power Dissipation | 349W |
| Input Type | Standard |
| Turn On Delay Time | 12 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 92 ns |
| Collector Emitter Voltage (VCEO) | 650V |
| Max Collector Current | 80A |
| Reverse Recovery Time | 42 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 2.5V |
| Test Condition | 400V, 40A, 6 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| IGBT Type | Field Stop |
| Gate Charge | 119nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 12ns/92ns |
| Switching Energy | 820μJ (on), 260μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 17ns |
| Height | 20.1mm |
| Length | 16.2mm |
| Width | 5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 349W |
FGA40N65SMD Description
FGA40N65SMD is a 650v, 40A field stop IGBT made by onsemi. Using novel field stop IGBT technology, ON Semiconductor FGA40N65SMD field stop 2nd generation IGBT offers the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS, and PFC applications where low conduction and switching losses are essential. The FGA40N65SMD operates within ambient temperatures from -55 to 175°C and with a power dissipation of 349W.
FGA40N65SMD Features
Positive temperature co-efficient for an easy parallel operating
High current capability
RoHS compliant
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
Fast switching: EOFF =6.5uJ/A
Tightened parameter distribution
Maximum junction temperature : TJ =175 °C
FGA40N65SMD Applications
UPS
Welder
PFC
Solar Inverter
ESS
Induction Heating
Telecom
