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ContactFF23MR12W1M1B11BOMA1
FF23MR12W1M1B11BOMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-FF23MR12W1M1B11BOMA1
- Package: Module
- Datasheet:
- Stock: 6623
- Description: FF23MR12W1M1B11BOMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Manufacturer Package Identifier | AG-EASY1BM-2 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tray |
| Published | 2008 |
| Series | CoolSiC™+ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| ECCN Code | EAR99 |
| Number of Channels | 2 |
| Power Dissipation | 20mW |
| Turn On Delay Time | 12 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 50A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V 1.2kV |
| Turn-Off Delay Time | 43.5 ns |
| Continuous Drain Current (ID) | 50A |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Silicon Carbide (SiC) |
| Height | 12.35mm |
| RoHS Status | ROHS3 Compliant |
FF23MR12W1M1B11BOMA1 Description
FF23MR12W1M1B11BOMA1 is a Easy DUAL Modul mit Cool SiC?Trench MOSFET und Press FIT/NTC.
FF23MR12W1M1B11BOMA1 Applications
·High Frequency Switching application
·DC/DC converter Solar applications
·UPS systems
FF23MR12W1M1B11BOMA1 Features
·High current density
·Low inductive design
·Low switching losses
Integrated NTC temperature sensor
·PressFIT contact technology
Rugged mounting due to integrated mounting clamps
