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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA, WLCSP |
| Number of Pins | 4 |
| Weight | 22.24mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.7W |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Number of Channels | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.7W |
| Turn On Delay Time | 9.5 ns |
| Power - Max | 500mW |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Transistor Application | SWITCHING |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 24V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 7A |
| Input Capacitance | 1.14nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Drain to Source Resistance | 23mOhm |
| Height | 150μm |
| Length | 1.6mm |
| Width | 1.4mm |
| RoHS Status | ROHS3 Compliant |
The device is a single package solution designed specifically for lithium-ion battery pack protection circuits and other ultra-portable applications. It features two common-drain N-channel MOSFET for bi-directional current flow, state-of-the-art PowerTritch process and state-of-the-art "low-pitch" WLCSP packaging process, minimizing PCB space and rS1S2 (conduction). This advanced WLCSP MOSFET represents a breakthrough in packaging technology, enabling the device to combine excellent heat transfer characteristics, ultra-thin packaging, low gate charge and low rS1S2 (conduction).
Max rS1S2(on) = 23 mΩ at VGS = 4.5 V, IS1S2 = 1 A
Max rS1S2(on) = 25 mΩ at VGS = 4 V, IS1S2 = 1 A
Max rS1S2(on) = 28 mΩ at VGS = 3.1 V, IS1S2 = 1 A
Max rS1S2(on) = 33 mΩ at VGS = 2.5 V, IS1S2 = 1 A
Occupies only 2.2 mm2 of PCB area
Ultra-thin package: less than 0.35 mm height when mounted to PCB
High power and current handling capability
HBM ESD protection level > 3.2 kV (Note 3)
RoHS Compliant
Mobile Handsets
Battery Management
Load Switch
Battery Protection
Please send RFQ , we will respond immediately.