FDZ1323NZ

FDZ1323NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDZ1323NZ
  • Package: 6-XFBGA, WLCSP
  • Datasheet: pdf
  • Stock: 7672
  • Description: FDZ1323NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFBGA, WLCSP
Number of Pins 6
Weight 50mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series PowerTrench®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Position BOTTOM
Terminal Form BALL
Number of Elements 2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 12 ns
Power - Max 500mW
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 380 pF
Height 150μm
Length 2.3mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

FDZ1323NZ Description


This particular device is intended to serve as a single package solution for ultra-portable applications such as Li-Ion battery pack protection circuits. The FDZ1323NZ reduces both PCB space and rs1S2(on)-resistance by utilizing two common drain N-channel MOSFETs, which enable bidirectional current flow, on Fairchild's innovative PowerTrench? process with cutting-edge "low pitch" WLCSP packaging method. This cutting-edge WLCSP MOSFET represents a development in packaging technique that makes it possible for the device to combine superior heat transfer properties, ultra-low profile packing, low gate charge, and low rSis2(on). -



FDZ1323NZ Features


  • only takes about 3 mm2 of PCB space.

  • When mounted to a PCB, an ultra-thin package has a height of less than 0.35 mm.

  • Ability to handle high power and current

  • 3.6 kV or above for HBM ESD protection (Note 3)

  • REACH Compliant



FDZ1323NZ Applications


  • Battery administration

  • Charge switch

  • Battery security


In Stock

Please send RFQ , we will respond immediately.