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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFBGA, WLCSP |
| Number of Pins | 6 |
| Weight | 50mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | PowerTrench® |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2W |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Elements | 2 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 12 ns |
| Power - Max | 500mW |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2055pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 380 pF |
| Height | 150μm |
| Length | 2.3mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
This particular device is intended to serve as a single package solution for ultra-portable applications such as Li-Ion battery pack protection circuits. The FDZ1323NZ reduces both PCB space and rs1S2(on)-resistance by utilizing two common drain N-channel MOSFETs, which enable bidirectional current flow, on Fairchild's innovative PowerTrench? process with cutting-edge "low pitch" WLCSP packaging method. This cutting-edge WLCSP MOSFET represents a development in packaging technique that makes it possible for the device to combine superior heat transfer properties, ultra-low profile packing, low gate charge, and low rSis2(on). -
only takes about 3 mm2 of PCB space.
When mounted to a PCB, an ultra-thin package has a height of less than 0.35 mm.
Ability to handle high power and current
3.6 kV or above for HBM ESD protection (Note 3)
REACH Compliant
Battery administration
Charge switch
Battery security
Please send RFQ , we will respond immediately.