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FDY3000NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDY3000NZ
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 168
- Description: FDY3000NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 23 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 32mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 700MOhm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ESD PROTECTION |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 625mW |
| Terminal Form | FLAT |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 625mW |
| Turn On Delay Time | 6 ns |
| Power - Max | 446mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 700m Ω @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 4.5V |
| Rise Time | 8ns |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 8 ns |
| Continuous Drain Current (ID) | 600mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Height | 700μm |
| Length | 1.6mm |
| Width | 1.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDY3000NZ Description
The dual N-channel MOSFET FDY3000NZ uses advanced power trench process design to optimize RDS (on) @ VGS=2.5V.
FDY3000NZ Features
600 mA, 20 V
RDS(ON) = 700 mΩ@ VGS = 4.5 V
RDS(ON) = 850 mΩ @ VGS = 2.5 V
ESD Protection Diode (note 3)
RoHS Compliant
FDY3000NZ Applications
This product FDY3000NZ is general usage and suitable for many different applications.
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