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FDY2000PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDY2000PZ
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 7499
- Description: FDY2000PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 22 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 32mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 625mW |
| Terminal Form | FLAT |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 630mW |
| Turn On Delay Time | 6 ns |
| Power - Max | 446mW |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 350mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 8 ns |
| Continuous Drain Current (ID) | 350mA |
| Threshold Voltage | -1.03V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 0.35A |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDY2000PZ Description
The dual P-channel MOSFET uses Fairchild's advanced power trench process to optimize rdson) @ Vas=-2.5V.
FDY2000PZ Features
·-350mA-20VRDsoN=1.2Ω@Vs=-4.5V
Rpsin=1.6Ω@Vas=-2.5V
·ESD protection diode(note 3)
RoHS Compliant
FDY2000PZ Applications
·Li-lon Battery Pack
