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ContactFDW2508PB
FDW2508PB datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDW2508PB
- Package: 8-TSSOP (0.173, 4.40mm Width)
- Datasheet:
- Stock: 1092
- Description: FDW2508PB datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Power - Max | 1W |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3775pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| FET Feature | Logic Level Gate |
FDW2508PB Description
The cutting-edge low voltage PowerTrench? from Fairchild Semiconductor is used in this P-Channel -1.8V specified MOSFET. For battery power management applications, it has been optimized. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
FDW2508PB Features
Low entrance fee
Extremely low rDS(on) with high performance trench technology
TSSOP-8 low profile package
RoHS compliant
FDW2508PB Applications
Power administration
Charge switch
Battery security
