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ContactFDW2502P
FDW2502P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDW2502P
- Package: 8-TSSOP (0.173, 4.40mm Width)
- Datasheet:
- Stock: 6298
- Description: FDW2502P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Power - Max | 600mW |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1465pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate |
FDW2502P Description
This P-Channel 2.5V specified MOSFET features a robust gate design and is made using the state-of-the-art PowerTrench technology from Fairchild Semiconductor. Its optimization for power management applications has utilized a wide variety of gate drive voltages (2.5V-12V).
FDW2502P Features
? Battery applications with a wider VGSS range (12V)
? Minimal entry fee
? Extremely low RDS using high performance trench technology (ON)
? Low profile TSSOP-8 packaging
FDW2502P Applications
? a load switch
? Drive by motor
? Conversion of DC to DC
? Power control
