FDS9934C

FDS9934C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDS9934C
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 4705
  • Description: FDS9934C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 30MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 6.5A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 16 ns
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.5A 5A
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 9ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 9 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 6.5A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Height 1.575mm
Length 4.9mm
Width 3.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)

FDS9934C     Description

 

These dual N-channel and P-channel enhanced mode power field effect transistors are produced using an advanced PowerTritch process that is customized to minimize on-resistance while maintaining excellent switching performance.These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.


FDS9934C      Features

 

Q1: N-Channel

6.5 A, 20 V

RDS(ON) = 30 mΩ @ VGS = 4.5 V

RDS(ON) = 43 mΩ @ VGS = 2.5 V

Q2: P-Channel

-5 A, -20 V

RDS(ON) = 55 mΩ @ VGS = -4.5 V

RDS(ON) = 90 mΩ @ VGS = -2.5 V


FDS9934C      Applications


This product is general usage and suitable for many different applications.


In Stock

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