FDS9933BZ

FDS9933BZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDS9933BZ
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 3059
  • Description: FDS9933BZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 230.4mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series PowerTrench®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 900mW
Number of Elements 2
Element Configuration Dual
Power Dissipation 1.6W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 46m Ω @ 4.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 985pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 9.3ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 9.3 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 4.9A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
RoHS Status RoHS Compliant

FDS9933BZ   Description

 

  These P-channel 2.5V MOSFET are manufactured using Xiantong Semiconductor's advanced power channel process, which is tailor-made to minimize on-resistance while maintaining low gate charge for excellent switching performance.

These devices are ideal for portable electronic applications: load switching and power management, battery charging and protection circuits.

 

FDS9933BZ    Features


Max rps(on)=46mΩat VG=-4.5V=-4.9A

Max rps(on)=69mΩat VGs=-2.5V1=-4.0A

Low gate charge(11nC typical).

High performance trench technology for extremely low rps(on).

HBM ESD protection level>3kV(Note 3)

 RoHS Compliant

 

FDS9933BZ     Applications


 Battery Charging

Load Switching

 





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