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FDS8960C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS8960C
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9502
- Description: FDS8960C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 2 V |
| Height | 1.75mm |
| Length | 4.9mm |
| Width | 3.9mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 24MOhm |
| Additional Feature | FAST SWITCHING |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 7A |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Power - Max | 900mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7A 5A |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 5V |
| Rise Time | 16ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 7A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain to Source Breakdown Voltage | 35V |
| Dual Supply Voltage | 35V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
FDS8960C Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using advanced PowerTritch manufacturing processes that are customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS8960C Features
Q1: N-Channel
7.0 A, 35 V
RDS(ON) = 24 mΩ @ VGS = 10 V
RDS(ON) = 32 mΩ @ VGS = 4.5 V
Q2: P-Channel
-5 A, -35 V
RDS(ON) = 53 mΩ @ VGS = -10 V
RDS(ON) = 87 mΩ @ VGS = -4.5 V
Fast switching speed
RoHS compliant
FDS8960C Applications
This product is general usage and suitable for many different applications.
