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FDS8958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS8958
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7623
- Description: FDS8958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 900mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 7A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 28m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 789pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A 5A |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Rise Time | 9.7ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 12.3 ns |
| Turn-Off Delay Time | 19.8 ns |
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain-source On Resistance-Max | 0.028Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Avalanche Energy Rating (Eas) | 54 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
FDS8958 Description
The sophisticated PowerTrench method from Fairchild Semiconductor is used to create these dual N- and P-Channel enhancement mode power field effect transistors. This process has been carefully designed to reduce on-state resistance while maintaining exceptional switching performance. These gadgets work well in battery- and low-voltage applications that need quick switching and little in-line power loss.
FDS8958 Features
brisk switching rate
A surface mount package with high handling and power capabilities that is widely used
FDS8958 Applications
Switching applications
