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FDS8949 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS8949
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3174
- Description: FDS8949 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Threshold Voltage | 1.9V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | 40V |
| Dual Supply Voltage | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.9 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 29mOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 40V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 6A |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 9 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 29m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 955pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 5V |
| Rise Time | 5ns |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 6A |
FDS8949 Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTritch process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS8949 Features
Max rDS(on) = 29m|? at VGS = 10V
Max rDS(on) = 36m|? at VGS = 4.5V
Low gate charge
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
FDS8949 Applications
This product is general usage and suitable for many different applications.
Inverter
Power Supplies
