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ContactFDS8928A
FDS8928A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS8928A
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 911
- Description: FDS8928A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 30MOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 5.5A |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Power - Max | 900mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 5.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A 4A |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
| Rise Time | 23ns |
| Drain to Source Voltage (Vdss) | 30V 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 90 ns |
| Turn-Off Delay Time | 260 ns |
| Continuous Drain Current (ID) | 5.5A |
| Threshold Voltage | 670mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 670 mV |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDS8928A Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using proprietary high cell density DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
FDS8928A Features
N-Channel
5.5A, 30V
Max. RDS(on) = 30 mΩ at VGS = 4.5 V,
Max. RDS(on) = 38 mΩ at VGS = 2.5 V
P-Channel
-4A, -20V
Max. RDS(on) = 55 mΩ at VGS = -4.5 V
Max. RDS(on) = 72 mΩ at VGS = -2.5 V
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
Dual (N & P-Channel) MOSFET in surface mount package
Applications
This product is general usage and suitable for many different applications.
