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ContactFDS8926A
FDS8926A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS8926A
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9712
- Description: FDS8926A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 900mW |
| Current Rating | 5.5A |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 5.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
| Rise Time | 19ns |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 42 ns |
| Continuous Drain Current (ID) | 5.5A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 670 mV |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FDS8926A Description
The high cell density, DMOS technology developed by Fairchild is used to create SO-8 N-Channel enhancement mode power field effect transistors. The on-state resistance is kept to a minimum and switching performance is higher because to this extremely high density technology. These components are especially well suited for low voltage applications like battery powered circuits and disk drive motor control where quick switching, minimal in-line power loss, and transient resistance are required.
FDS8926A Features
Design of high density cells for incredibly low RDS (ON).
combine high breakdown voltage of 30 V with low gate threshold (totally improved at 2.5V).
a surface mount package with high power and current handling capacity.
Surface-mount package housing two MOSFETs.
FDS8926A Applications
Switching applications
