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FDS89161LZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS89161LZ
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 111
- Description: FDS89161LZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.6W |
| Terminal Form | GULL WING |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 31W |
| Turn On Delay Time | 3.8 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 105m Ω @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 302pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 5.3nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 9.5 ns |
| Continuous Drain Current (ID) | 2.7A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.105Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 15A |
| Avalanche Energy Rating (Eas) | 13 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Height | 1.575mm |
| Length | 4.9mm |
| Width | 3.9mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
FDS89161LZ Description
This N-channel logic level MOSFET is produced by Fair child's advanced Power Trenche process, which combines shielded gate technology. The process is optimized for the on-resistance, while still maintaining excellent switching performance. Gmurs Zener is added to improve the ESD voltage level.
FDS89161LZ Features
Shielded Gate MOSFET Technology
Max rps(on)=105mΩat VGs=10V，ID=2.7 A Maxrpsion)=160mΩatVGs=4.5V=2.1A
High performance trench technology for extremely low rps(on)
High power and current handling capability in a widely used surface mount package
ICDM ESD protection evel>2KV typical(Note 4)
100% UIL Tested
RoHS Compliant
FDS89161LZ Applications
Gmurs Zener
