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FDS8858CZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS8858CZ
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2049
- Description: FDS8858CZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17m Ω @ 8.6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1205pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 8.6A 7.3A |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Rise Time | 10ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 8.6A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | -60V |
| Dual Supply Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.6 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 17mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 900mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
FDS8858CZ Description
These dual N and P-channel enhanced mode MOSFET are advanced power trench processes produced by on Semiconductor and are tailored to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power loss and FAS switches.
FDS8858CZ Applications
inverter
Synchronous Buck
FDS8858CZ Features
Q1:N-Channel
Maxrps(on)=17mΩatVGs=10Vp=8.6A
Max ros(on)=20mΩ at VGs=4.5V1=7.3A Q2: P-Channel
Max rps(on)=20.5mΩatVGs=-10VID=-7.3A
Max rps(on)=34.5mΩatVGs=-4.5V1p=-5.6A
High power and handing capability in a widely used surface mount package
.Fast switching speed
