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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench®, SyncFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 21MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 900mW |
| Terminal Form | GULL WING |
| Current Rating | 8.2A |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 21m Ω @ 6.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A 8.2A |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Rise Time | 8ns |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 8.2A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 6.9A |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
The FDS6994S is designed to replace two single SO-8 MOSFET and Schottky diodes in solar synchronous DC:DC power supplies that provide useless peripheral voltages for laptops and other battery-powered electronic devices. The FDS6994S consists of two square root 30V, N-channel, logic-level Power Tranne MOSFET designed to maximize power conversion efficiency.
The design of the high-end switch (Q1) focuses on reducing the switching loss, while the optimization of the low-end switch (Q2) is to reduce the turn-on loss. Q2 also includes an integrated Schottky diode using Fairchild monolithic SyncFET technology.
Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A,30V Rps(on)=15mΩ @VGs=10V
Rps(an)=17.5mΩ @VGs=4.5V
Q1: Optimized for low switching losses
Low gate charge(85.5 nC typical)
6.9A,30VRps(an)=21mΩ @VGs=10V
Rps(an)=26mΩ @VGs=4.5V
laptops
other battery-powered electronic devices
Please send RFQ , we will respond immediately.