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| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
| Rise Time | 8ns |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 7.5mA |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.7 V |
| Height | 1.75mm |
| Length | 5mm |
| Width | 4mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench®, SyncFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 22mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 900mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 8 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
The FDS6990AS is designed to replace one dual SO-8 MOSFET and two Schottky diodes in a synchronous DC:DC power supply. This 30V MOSFET is designed to maximize power conversion efficiency, providing low RDS (on) voltage and low gate charge. Each MOSFET includes integrated Schottky diodes using monolithic SyncFET technology. As a low-end switch in synchronous rectifier, the performance of FDS6990AS is similar to that of FDS6990A in parallel with Schottky diodes.
7.5A, 30V
RDS(ON) = 22 mΩ @ VGS = 10V
RDS(ON) = 28 mΩ @ VGS = 4.5V
Includes SyncFET Schottky body diode
Low gate charge (10nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
This product is general usage and suitable for many different applications.
DC/DC Converters
Motor Drives
Please send RFQ , we will respond immediately.