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FDS6984AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6984AS
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3967
- Description: FDS6984AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Resistance | 32MOhm |
| Max Power Dissipation | 2W |
| Number of Elements | 2 |
| Power Dissipation | 2W |
| Power - Max | 900mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 31m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A 8.5A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 6ns |
| Fall Time (Typ) | 2 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 8.5A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Feature | Logic Level Gate |
| Height | 1.5mm |
| Length | 5mm |
| Width | 3.99mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench®, SyncFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
FDS6984AS Description
The FDS6984AS is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6984AS contains two unique 30V, N-channel, logic level, and power slot MOSFET designed to maximize power conversion efficiency.The design of the high-end switch (Q1) focuses on reducing the switching loss, while the low-end switch (Q2) is optimized to reduce the turn-on loss. Q2 also includes a patented combination of MOSFET and Schottky diode monolithic integration.
FDS6984AS Features
Q2
Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V
Max. RDS(on) = 20 mΩ at VGS = 10 V
Max. RDS(on) = 28 mΩ at VGS = 4.5 V
Q1
Optimized for Low Switching Losses
5.5A, 30V
Max. RDS(on) = 31 mΩ at VGS = 10 V
Max. RDS(on) = 40 mΩ at VGS = 4.5 V
Low gate charge (8nC typical)
RoHS Compliant
FDS6984AS Applications
This product is general usage and suitable for many different applications.
