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FDS6982AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6982AS
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7185
- Description: FDS6982AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench®, SyncFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 28MOhm |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 8.6A |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 12 ns |
| Power - Max | 900mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 28m Ω @ 6.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A 8.6A |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Rise Time | 7ns |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 8.6A |
| Threshold Voltage | 1.9V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 30A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 19 ns |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.4 V |
| Turn Off Time-Max (toff) | 64ns |
| Turn On Time-Max (ton) | 34ns |
| Height | 1.75mm |
| Length | 5mm |
| Width | 3.99mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDS6982AS Description
The FDS6982AS is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6982AS contains two unique 30V, N-channel, logic levels PowerTritch MOSFET designed to maximize power conversion efficiency. The design of the high-end switch (Q1) focuses on reducing the switching loss, while the low-end switch (Q2) is optimized to reduce the turn-on loss. Q2 also includes an integrated Schottky diode using on Semiconductor monolithic SyncFET technology.
FDS6982AS Features
Q2
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.6A, 30V
Max. RDS(on) = 13.5 m|? at VGS = 10 V
Max. RDS(on) = 16.5 m|? at VGS = 4.5 V
Low gate charge (21nC typical)
Q1
Optimized for low switching losses
6.3A, 30V
Max. RDS(on) = 28.0 m|? at VGS = 10 V
Max. RDS(on) = 35.0 m|? at VGS = 4.5 V
Low gate charge (11nC typical)
FDS6982AS Applications
This product is general usage and suitable for many different applications.
Notebook
