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FDS6930B datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6930B
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3364
- Description: FDS6930B datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Resistance | 38MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 5.5A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Voltage | 30V |
| Current | 55A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 6 ns |
| Power - Max | 900mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 38m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 412pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 5V |
| Rise Time | 6ns |
| Fall Time (Typ) | 2 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 5.5A |
| Threshold Voltage | 1.9V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.9 V |
| Feedback Cap-Max (Crss) | 60 pF |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
FDS6930B Description
These N-channel logic level MOSFET are produced using advanced power channel semiconductor processes, and in particular are considered to reduce on-resistance and maintain excellent switching performance.
These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6930B Features
5.5A,30 V.RDS(ON)=38mΩ @VGs=10V
Rps(ON)=50mΩ@VGs=4.5V
Fast switching speed Low gate charge
High performance trench techinologyfor extremely lowRDS(ON)
High power and current handling capability
FDS6930B Applications
low-voltage and battery-powered applications
