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FDS6900AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6900AS
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5496
- Description: FDS6900AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 27m Ω @ 6.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A 8.2A |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Rise Time | 4ns |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 8.2A |
| Threshold Voltage | 1.9V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6.9A |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.9 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 3.99mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench®, SyncFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 27MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 8.2A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Power - Max | 900mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
FDS6900AS Description
The FDS6900AS is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6900AS contains two unique 30V, N-channel, logic level, and power slot MOSFET designed to maximize power conversion efficiency. The design of the high-end switch (Q1) focuses on reducing the switching loss, while the low-end switch (Q2) is optimized to reduce the turn-on loss. Q2 also includes an integrated Schottky diode using on Semiconductor monolithic SyncFET technology.
FDS6900AS Features
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A, 30V
RDS(on) = 22mΩ @ VGS = 10V
RDS(on) = 28mΩ @ VGS = 4.5V
Q1:
Optimized for low switching losses
Low Gate Charge (11nC typical)
6.9A, 30V
RDS(on) = 27mΩ @ VGS = 10V
RDS(on) = 34mΩ @ VGS = 4.5V
100% RG (Gate Resistance) Tested
FDS6900AS Applications
This product is general usage and suitable for many different applications.
