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ContactFDS6890A
FDS6890A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6890A
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 665
- Description: FDS6890A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 180mOhm |
| Additional Feature | FAST SWITCHING |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 7.5A |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 13 ns |
| Power - Max | 900mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 7.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2130pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 4.5V |
| Rise Time | 26ns |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 65 ns |
| Continuous Drain Current (ID) | 7.5A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 800 mV |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDS6890A Description
These N-channel 2.5V MOSFET are produced using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance.
FDS6890A Features
7.5 A, 20 V
RDS(ON) = 0.018 |? @ VGS = 4.5 V
RDS(ON) = 0.022 |? @ VGS = 2.5 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS6890A Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Motor Drives
