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FDS4953 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS4953
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2803
- Description: FDS4953 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 900mW |
| Current Rating | -5A |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| Turn On Delay Time | 7 ns |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 528pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 5V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | -5A |
| Threshold Voltage | -1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Dual Supply Voltage | -30V |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1.7 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FDS4953 Description
This P-Channel MOSFET is a rugged gate version of Xiantong Semiconductor's advanced power grooving process. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS4953 Features
·-5A-30V RosoN)=55mΩ@Vas=-10V
RosON)=95mΩ@VGs=-4.5V
·Low gate charge(6nC typical)
Fast switching speed
.High performance trench technology for extremely low Ros(ON)
·High power and current handling capability
FDS4953 Applications
Power management Load switch
Battery protection
