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ContactFDS4935
FDS4935 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS4935
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4311
- Description: FDS4935 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ESD PROTECTION |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 900mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -7A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Voltage | 30V |
| Current | 7A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1233pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| Rise Time | 10ns |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 48 ns |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | -30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FDS4935 Description
This P-Channel MOSFET is made using Fairchild Semiconductor's cutting-edge PowerTrench technology, which has a tough gate version. It has been designed to work well with power management applications that call for drives with a wide range of voltage ratings (4.5V to 25V).
FDS4935 Features
? inexpensive gate fee (15nC typical)
? Quick switchover
? Extremely low RDS using high performance trench technology (ON)
? Capable of handling high power and current
FDS4935 Applications
? power control
? Switch for load
? Battery security
