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FDS4559 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS4559
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6423
- Description: FDS4559 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 55MOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 4.5A |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Power - Max | 1W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A 3.5A |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 10ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 4.5A |
| Threshold Voltage | 2.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Avalanche Energy Rating (Eas) | 90 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 175°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 2.2 V |
| Height | 1.75mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Description
The FDS4559 is a complementary MOSFET device that is manufactured utilizing the innovative PowerTrench process, which has been specifically optimized to reduce on-state resistance while maintaining a low gate charge for enhanced switching performance. The LCD backlight inverter is compatible with this product. The FDS4559 is a Complementary PowerTrench? MOSFET with a 60V supply voltage. This complementary MOSFET is made with ON Semiconductor's advanced PowerTrench process, which has been specifically tailored to reduce on-state resistance while maintaining a low gate charge for superior switching performance.
Features
? Q1: N-Channel
4.5 A, 60 V RDS(on) = 55 m? @ VGS = 10V
RDS(on) = 75 m? @ VGS = 4.5V
? Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 m? @ VGS = –10V
RDS(on) = 135 m? @ VGS = –4.5V
? Withstand voltage: For the target withstand voltage, the best structure is chosen.
? Low On-Resistance: U-MOS is best for devices with less than 250 V, whereas SJ-MOS (or DTMOS) is better for those with more.
? Low ON resistance has the same tendency as high current.
Applications
DC/DC converter
Power management
LCD backlight inverter
Power management
Switch-mode power supplies
