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ContactFDS3601
FDS3601 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS3601
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 1202
- Description: FDS3601 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Reach Compliance Code | compliant |
| Power - Max | 900mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 480m Ω @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Logic Level Gate |
FDS3601 Description
With either synchronous or traditional switching PWM controllers, these N-Channel MOSFETs have been specifically created to increase the overall efficiency of DC/DC converters. Compared to other MOSFETs with comparable RDS(ON) parameters, these MOSFETs switch more quickly and have a lower gate charge. As a result, driving a MOSFET becomes simpler and safer (even at very high frequencies), and more efficient DC/DC power supply designs are produced.
FDS3601 Features
? quick switching times
? Minimal gate fee (3.7nC typical)
? Ultra-low RDS with high performance trench technology (ON)
? The capacity to handle large current and power loads
FDS3601 Applications
Switching applications
