FDR8508P

FDR8508P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDR8508P
  • Package: 8-LSOP (0.130, 3.30mm Width)
  • Datasheet: pdf
  • Stock: 5512
  • Description: FDR8508P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-LSOP (0.130, 3.30mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -30V
Max Power Dissipation 800mW
Current Rating -3A
Number of Elements 2
Power Dissipation 800mW
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 52m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V

FDR8508P Description


The innovative PowerTrench process from Fairchild Semiconductor is used to create these P-Channel 2.5V specified MOSFETs. This process has been carefully designed to reduce on state resistance while maintaining low gate charge for excellent switching performance.



FDR8508P Features


  • Low entrance fee (8nC typical).

  • Extremely high performance trench technology

  • High capacity for managing current and power.

  • Low profile packaging (1 mm thick), tiny footprint (38 percent smaller than a normal SO-8), and power handling capacity comparable to SO-8



FDR8508P Applications


? Charge switch


? Converter DC/DC


? Driving a car


In Stock

Please send RFQ , we will respond immediately.