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ContactFDPC8013S
FDPC8013S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDPC8013S
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 8027
- Description: FDPC8013S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 192mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2009 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2W |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| Turn On Delay Time | 6 ns |
| Power - Max | 800mW 900mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 6.4m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 827pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13A 26A |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 5ns |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 55A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.7 V |
| Height | 750μm |
| Length | 3.4mm |
| Width | 3.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDPC8013S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.
FDPC8013S Features
Q1 N-Channel
Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A
Q2 N-Channel
Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8013S Applications
Distribution
Other Wired Communications
Computing
Communications
General Purpose Point of Load
