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ContactFDPC8012S
FDPC8012S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDPC8012S
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 8042
- Description: FDPC8012S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 12A, 4.5V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1075pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 13A 26A |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Rise Time | 3ns |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 88A |
| JEDEC-95 Code | MO-240BA |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 13A |
| Drain-source On Resistance-Max | 0.007Ohm |
| Drain to Source Breakdown Voltage | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 725μm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 192mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2W |
| Number of Elements | 2 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 800mW 900mW |
FDPC8012S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC8012S Features
Q1 N-Channel
Max. RDS(on) = 7.0 m|? at VGS = 4.5 V, ID = 12 A
Q2 N-Channel
Max. RDS(on) = 2.2 m|? at VGS = 4.5 V, ID = 23 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8012S Applications
Server
Computing
Communications
General Purpose Point of Load
