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ContactFDPC8011S
FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDPC8011S
- Package: -
- Datasheet:
- Stock: 9258
- Description: FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 192mg |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 900mW |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Transistor Application | SWITCHING |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 25V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 27A |
| Threshold Voltage | 1.4V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 13A |
| Drain to Source Breakdown Voltage | 25V |
| Input Capacitance | 1.24nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 1.2mOhm |
| Rds On Max | 6 mΩ |
| Nominal Vgs | 1.4 V |
| Height | 800μm |
| Length | 3.4mm |
| Width | 3.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDPC8011S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC8011S Features
Q1 N-Channel
Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A
Q2 N-Channel
Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8011S Applications
Server
Computing
Communications
General Purpose Point of Load
