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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 123.733334mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2.7W |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 2 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.7W |
| Case Connection | SOURCE |
| Turn On Delay Time | 8.5 ns |
| Power - Max | 1W |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.3m Ω @ 27A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3215pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 27A |
| Gate to Source Voltage (Vgs) | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 95 pF |
| Height | 750μm |
| Length | 3.4mm |
| Width | 3.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
The device is a single package solution designed specifically for lithium-ion battery pack protection circuits and other ultra-portable applications. It has two common-drain N-channel MOSFET, which can realize bi-directional current flow. FDPC4044 combines on Semiconductor's advanced PowerTritch packaging process with the most advanced packaging process to minimize the latest packaging process and minimize on-resistance.
Max rS1S2(on) = 4.3 m|? at VGS = 10 V, IS1S2 = 27 A
Max rS1S2(on) = 6.4 m|? at VGS = 4.5 V, IS1S2 = 23 A
Pakage size/height: 3.3 x 3.3 x 0.8 mm
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
Notebook PC
Battery Management
Load Switch
Battery Protection
Please send RFQ , we will respond immediately.