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ContactFDMS9600S
FDMS9600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS9600S
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 2449
- Description: FDMS9600S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 9mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 13MOhm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1W |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.5m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1705pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 12A 16A |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| Rise Time | 11ns |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 54 ns |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 375 pF |
| Height | 825μm |
| Length | 5mm |
| Width | 6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMS9600S Description
The device includes two specialized MOSET in a unique Dual Power 56 package. It is designed to provide the best synchronous step-down power supply phase in terms of efficiency and PCB utilization. "low switching loss" High side MOSFET realized by "low side" SyncFET with low conduction loss.
FDMS9600S Features
Q1:N-Channel
Max rps(on)=8.5m|?at VGs=10V￡?1o=12A
Max rps(on)=12.4m|?at VGs=4.5Vlp=10A
Q2:N-Channel
Max rps(on)=5.5m|?atVGs=10V￡?Io=16A
Max rps(on)=7.0m|? at VGs=4.5V￡?lD=14A
Low Qg high side MOSFET
Low rps(on) low side MOSFET
Thermally efficient dual Power 56 package
Pinout optimized for simple PCB design
RoHS Compliant
FDMS9600S Applications
step-down power supply
