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ContactFDMS3624S
FDMS3624S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS3624S
- Package: -
- Datasheet:
- Stock: 4033
- Description: FDMS3624S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN SOURCE |
| Turn On Delay Time | 7 ns |
| Transistor Application | SWITCHING |
| Drain to Source Voltage (Vdss) | 25V |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 30A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 17.5A |
| Drain to Source Breakdown Voltage | 25V |
| Input Capacitance | 1.57nF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 5mOhm |
| Rds On Max | 5 mΩ |
| Height | 1.05mm |
| Length | 5.1mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 90mg |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1W |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
FDMS3624S Description
The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.
FDMS3624S Features
Q1: N-Channel
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 Al
Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 Al
Q2: N-Channel
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 Al
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 Al
Low inductance packaging shortens rise/fall times, resulting in lower switching lossesl
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringingl
RoHS Compliantl
FDMS3624S Applications
Distribution
Notebook PC
