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FDMS3604S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS3604S
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 8123
- Description: FDMS3604S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-N6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN SOURCE |
| Turn On Delay Time | 13 ns |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1785pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13A 23A |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Rise Time | 4.8ns |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 31 ns |
| Continuous Drain Current (ID) | 23A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Avalanche Energy Rating (Eas) | 40 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1mm |
| Length | 6mm |
| Width | 5mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 171mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
FDMS3604S Description
FDMS3604S is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3604S Features
Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A
Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A
Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
This Device is Pb?Free and is RoHS Compliant
FDMS3604S Applications
Computing
Communications
General Purpose Point of Load
Notebook VCORE
