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FDMS3602S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMS3602S
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 2556
- Description: FDMS3602S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Weight | 90mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 5.6MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1W |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN SOURCE |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.6m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 15A 26A |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 4.2ns |
| Fall Time (Typ) | 3.2 ns |
| Turn-Off Delay Time | 31 ns |
| Continuous Drain Current (ID) | 26A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 15A |
| Drain to Source Breakdown Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Avalanche Energy Rating (Eas) | 50 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.8 V |
| Height | 1.05mm |
| Length | 5mm |
| Width | 6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMS3602S Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
FDMS3602S Features
Q1: N-Channel
Max RDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
Max RDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
Q2: N-Channel
Max RDS(on) = 2.2 mΩ at VGS = 10 V, ID= 26 A
Max RDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
Low-inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDMS3602S Applications
This product is general usage and suitable for many different applications.
