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ContactFDMQ8203
FDMQ8203 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMQ8203
- Package: 12-WDFN Exposed Pad
- Datasheet:
- Stock: 228
- Description: FDMQ8203 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Length | 5mm |
| Width | 4.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 12-WDFN Exposed Pad |
| Number of Pins | 12 |
| Weight | 210mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | GreenBridge™ PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2.5W |
| Base Part Number | FDMQ8203 |
| Number of Elements | 4 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| FET Type | 2 N and 2 P-Channel (H-Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A 2.6A |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Rise Time | 2.8ns |
| Drain to Source Voltage (Vdss) | 100V 80V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 2.7 ns |
| Continuous Drain Current (ID) | 2.6A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain-source On Resistance-Max | 0.11Ohm |
| Drain to Source Breakdown Voltage | -80V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 3 V |
| Height | 750μm |
FDMQ8203 Description
This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
FDMQ8203 Features
Q1/Q4: N-Channel
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
Substantial efficiency benefit in PD solutions
Q2/Q3: P-Channel
Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
RoHS Compliant
FDMQ8203 Applications
Central Office
