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ContactFDME1034CZT
FDME1034CZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDME1034CZT
- Package: 6-UFDFN Exposed Pad
- Datasheet:
- Stock: 2298
- Description: FDME1034CZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 25.2mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | ESD PROTECTION |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.4W |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Case Connection | DRAIN |
| Power - Max | 600mW |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 66m Ω @ 3.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A 2.6A |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| Rise Time | 4.8ns |
| Drain to Source Voltage (Vdss) | 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 3.8A |
| Threshold Voltage | 700mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 3.4A |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 700 mV |
| Feedback Cap-Max (Crss) | 40 pF |
| Height | 500μm |
| Length | 1.6mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
FDME1034CZT Description
The device is a single package solution designed for DC/DC' switch 'MOSFET in cellular phones and other super-portable applications. It has independent N-channel and P-channel MOSFET and low on-state resistance to minimize on-loss. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the control device. The MicroFET 1.6x1.6 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for switching and linear mode applications.
FDME1034CZT Features
Q1: N?Channel
? Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A
? Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A
? Max rDS(on) = 113 m at VGS = 1.8 V, ID = 2.5 A
? Max rDS(on) = 160 m at VGS = 1.5 V, ID = 2.1 A
Q2: P?Channel
? Max rDS(on) = 142 m at VGS = ?4.5 V, ID = ?2.3 A
? Max rDS(on) = 213 m at VGS = ?2.5 V, ID = ?1.8 A
? Max rDS(on) = 331 m at VGS = ?1.8 V, ID = ?1.5 A
? Max rDS(on) = 530 m at VGS = ?1.5 V, ID = ?1.2 A
? Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
? Free from Halogenated Compounds and Antimony Oxides
? HBM ESD Protection Level > 1600 V (Note 3)
? This Device is Pb?Free and is RoHS Compliant
FDME1034CZT Applications
? DC?DC Conversion
? Level Shifted Load Switch
