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FDMD8280 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMD8280
- Package: 12-PowerWDFN
- Datasheet:
- Stock: 3916
- Description: FDMD8280 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 12-PowerWDFN |
| Number of Pins | 12 |
| Weight | 82.3188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 1W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN SOURCE |
| Turn On Delay Time | 15 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.2m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3050pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time (Typ) | 8.9 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 11A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 80V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
FDMD8280 Description
This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.
FDMD8280 Features
Max rDS(on) = 8.2 m|? at VGS = 10 V, ID = 11 A
Max rDS(on) = 11 m|? at VGS = 8 V, ID = 9.5 A
Ideal for flexible layout in primary side of bridge topology
Termination is Lead-free and RoHS Compliant
100% UIL tested
Kelvin High Side MOSFET drive pin-out capability
FDMD8280 Applications
This product is general usage and suitable for many different applications.
