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| Parameters | |
|---|---|
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 186mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 20MOhm |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1W |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN SOURCE |
| Power - Max | 700mW 1W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6A 8.5A |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 18A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 2.3 V |
| Feedback Cap-Max (Crss) | 30 pF |
| Height | 750μm |
| Length | 3mm |
| Width | 3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
This device comes in a due power33(3mm X 3mm MLP) packaging and features two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous MOSFET (Q2) have been constructed.
Maximum rDS(on) at VGS = 10 V, ID = 8.5 A is 10 m.
Maximum rDS(on) is 13.5 m at 4.5 V and 7.2 A.
Conforms to RoHS
cellular computing
cellular internet devices
Point of Load for All Purposes
Please send RFQ , we will respond immediately.