FDMC8200S

FDMC8200S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMC8200S
  • Package: 8-PowerWDFN
  • Datasheet: pdf
  • Stock: 4705
  • Description: FDMC8200S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 186mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 20MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
Power - Max 700mW 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A 8.5A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.3 V
Feedback Cap-Max (Crss) 30 pF
Height 750μm
Length 3mm
Width 3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount

FDMC8200S Description


This device comes in a due power33(3mm X 3mm MLP) packaging and features two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous MOSFET (Q2) have been constructed.



FDMC8200S Features


  • Maximum rDS(on) at VGS = 10 V, ID = 8.5 A is 10 m.

  • Maximum rDS(on) is 13.5 m at 4.5 V and 7.2 A.

  • Conforms to RoHS



FDMC8200S Applications


  • cellular computing

  • cellular internet devices

  • Point of Load for All Purposes


In Stock

Please send RFQ , we will respond immediately.