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FDMC8200 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMC8200
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 2408
- Description: FDMC8200 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 186mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 20MOhm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 900mW |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.2W |
| Case Connection | DRAIN-SOURCE |
| Power - Max | 700mW 900mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 8A 12A |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 4ns |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 2.3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 40A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 2.3 V |
| Feedback Cap-Max (Crss) | 30 pF |
| Turn On Time-Max (ton) | 30ns |
| Height | 750μm |
| Length | 3mm |
| Width | 3mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMC8200 Description
The device includes two dedicated N-channel MOSFET in a dual Power33 (3 Mm X 3 Mm MLP) package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous MOSFET (Q2) are designed to provide optimal power efficiency.
FDMC8200 Features
Q1: N-Channel
Max. RDS(on) = 20 mΩ at VGS = 10 V, ID = 6A
Max. RDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5A
Q2: N-Channel
Max. RDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9A
Max. RDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7A
RoHS Compliant
FDMC8200 Applications
This product is general usage and suitable for many different applications.
