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FDMC8032L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMC8032L
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 4272
- Description: FDMC8032L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 196mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 12W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N4 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.5 ns |
| Power - Max | 1.9W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 1.2ns |
| Fall Time (Typ) | 1.3 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 50A |
| Avalanche Energy Rating (Eas) | 13 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 750μm |
| Length | 3mm |
| Width | 3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMC8032L Description
The device includes two 40V N-channel MOSFET in a dual power supply 33 (3 Mm X 3 Mm MLP) package. The package is enhanced and has excellent heat dissipation performance.
FDMC8032L Features
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A
Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A
Low Inductance Packaging Shortens Rise/Fall Times
Lower Switching Losses
100% Rg Tested
Termination is Lead-free and RoHS Compliant
FDMC8032L Applications
This product is general usage and suitable for many different applications.
