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ContactFDMB3900AN
FDMB3900AN datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMB3900AN
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 4445
- Description: FDMB3900AN datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 800mW |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 13V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 3ns |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain to Source Breakdown Voltage | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 750μm |
| Length | 3mm |
| Width | 1.9mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 60μg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
FDMB3900AN Description
These N-channel logic level MOSFET are manufactured using Xiantong Semiconductor's advanced power channel process, which is tailor-made to minimize on-state resistance while maintaining excellent switching performance.
These devices are ideal for low-voltage and battery-powered applications that require low line power loss and fast switching.
FDMB3900AN Features
Maxos(on)=23mΩatVGs=10Vb=7.0A
Maxrps(on)=33mΩat VGs=4.5Vlp=5.5A
Fast switching speed Low gate charge
High performance trench technology for extremely low rpson
High power and current handling capability
RoHS Compliant
FDMB3900AN Applications
low-voltage
battery-powered
